| PART |
Description |
Maker |
| 82S131 N82S131A N82S130N N82S131N N82S130A N82S131 |
V(cc): 7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion
2K-bit TTL bipolar PROM 512 X 4 OTPROM, 50 ns, PDIP16
|
List of Unclassifed Manufacturers
Philips Semiconductors
ETC
Electronic Theatre Controls, Inc.
NXP Semiconductors N.V.
|
| N82S183 |
8K-Bit TTL Bipolar PROM
|
NXP
|
| AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
1M X 16 FLASH 3V PROM, 90 ns, PDSO44
1M X 16 FLASH 3V PROM, 70 ns, PDSO48
1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| UT28F256 UT28F256T-45UPX 5962F9689103QXA 5962F9689 |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
320 x 240 pixel format, LED or CFL Backlight
Recalibration Service for 2120B B&K Oscilloscope
Oscilloscope; Scope Type:Analog; Scope Bandwidth:30 MHz; Scope Channels:2 Scope; Calibrated:No; Rise Time:12ns; Sensitivity:5 mV/div to 5 V/div; Accuracy: /- 3 %; Resistance:1Mohm
Recalibration Service for 2125A B&K Oscilloscope
Radiation-Hardened 32K x 8 PROM 辐射加固32K的8胎膜早破
Recalibration Service for 2120B B&K Oscilloscope 辐射加固32K的8胎膜早破
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-Hardened 32K x 8 PROM
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
NEC, Corp.
Aeroflex Circuit Techno...
|
| R29771 R29683 |
Standard 4096 x 8 Bit PROM(标准096 x 8 PROM)
Standard 2048 x 8 Bit PROM(标准048 x 8 PROM) 标准048 × 8位可编程（标准的2048 × 8位可编程
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
6800uF 100WV 20% *NO Pb*
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48
VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
http://
|
| 3621 |
256 x 4 TTL PROM Memory
|
Intel
|
| MR27V802D |
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
|
| S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
CONNECTOR ACCESSORY 连接器附
CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位）.0伏的CMOS只引导扇区闪
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只引导扇区闪
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只引导扇区闪
JT 16C 16#16 PIN RECP
CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR
SSR OCMOS FET 200MA NO 6-SOIC
|
SPANSION LLC
Spansion, Inc.
Spansion Inc.
|
| 5962F9687301QXA 5962F9687301QXX 5962F9687301QYA 59 |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 5E5rads(Si)
|
Aeroflex Circuit Technology
|
| SST37VF010 SST37VF010-70-3C-NH SST37VF010-70-3C-PH |
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 90 ns, PDIP32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 256K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 64K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
DIODE ZENER SINGLE 300 - 350mW 47Vz 2mA-Izt 0.0638 0.1uA-Ir 32.9 SOT-23 3K/REEL 128K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
DIODE ZENER SINGLE 300 - 350mW 43Vz 2mA-Izt 0.0698 0.1uA-Ir 30.1 SOT-23 3K/REEL
DIODE ZENER SINGLE 300mW 4.3Vz 5mA-Izt 0.0698 3uA-Ir 1 SOT-23 3K/REEL
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
SST[Silicon Storage Technology, Inc]
|
| M38513M4 M38513M4-C56FP 3851GROUP M38512M4 M38513M |
Single-chip 8-bit CMOS microcomputer. PROM 16K bytes, RAM 512 bytes. One time PROM version.
Single-chip 8-bit CMOS microcomputer. PROM 24K bytes, RAM 640 bytes. One time PROM version.
Single Chip 8-Bit CMOS Microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
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